Nonvolatile semiconductor memory device

ABSTRACT

A nonvolatile semiconductor memory device including a memory cell and a selection transistor, and the memory cell includes a floating gate formed on a semiconductor substrate via a first gate insulation film, a pair of first diffusion layers positioned on the opposite sides of the floating gate and formed in the substrate, first and second control gates formed on the opposite sides of the floating gate to drive the floating gate, and an inter-gate insulation film formed between the first and second control gates and the floating gate. The selection transistor includes a selection gate formed on the substrate via a second gate insulation film, and a pair of second diffusion layers formed in the substrate positioned on the opposite sides of the selection gate and one of which is electrically connected to one of the pair of first diffusion layers.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Applications No. 2003-178418, filed Jun. 23, 2003;and No. 2004-158884, filed May 28, 2004, the entire contents of both ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a nonvolatile semiconductor memory devicehaving a multilayer gate structure including a floating gate and acontrol gate.

2. Description of the Related Art

FIGS. 1 through 3 illustrates a known NAND type EEPROM realized byutilizing shallow trench isolation (STI). FIG. 1 is a schematic planview and FIGS. 2 and 3 are two different cross-sectional views of FIG.1.

As shown in FIG. 2, a gate insulation film GI, which is a tunnelinginsulation film, is formed on a silicon substrate (Si-sub) and floatinggates FG are formed thereon. The floating gates FG of adjacent cells areseparated and electrically insulated from each other. The structure thatseparates adjacently located floating gates FG apart from each other isreferred to as a slit. The floating gates FG between a pair of slits arecovered at the top and the opposite lateral sides by an inter-gateinsulation film IGI. Each floating gate FG can be made to hold anelectric charge for a long period because it is covered by a tunnelinginsulation film and an inter-gate insulation film.

A control gate CG is formed on the inter-gate insulation film. Normally,a control gate CG is shared by a large number of cell transistors andadapted to drive the number of cell transistors simultaneously. Thecontrol gate CG is also referred to as word line WL.

On the other hand, the cross-sectional view of FIG. 3 is taken along abit line BL. Stacked gate structures illustrated in FIG. 3 are arrangedon the substrate in rows along the direction of bit lines BL. Each celltransistor is processed in a self-aligning manner by means of resist ora processing mask layer. In the NAND type memory device where a numberof cells are connected in series by way of select gates, adjacent cellsshare a source and a drain in order to reduce the area occupied by eachcell. Each word line WL and the gap separating adjacent word lines WLare formed with minimum feature size by micro-processing.

Electrons are injected into a floating gate FG by applying a high writepotential to the corresponding control gate CG and grounding thesubstrate. As cell transistors are micronized, an increased parasiticcapacitance appears between adjacent cells and between a floating gateFG and a peripheral structure. For this reason, there is a tendency ofraising the write voltage of cell transistors for the purpose ofincreasing the data writing rate. Control gates CG need to be reliablyinsulated from each other and word line drive circuits are required towithstand high voltages when a high voltage is used for the writevoltage. This poses a problem when arranging memory elements at highdensity and driving them to operate at high speed.

It is possible to roughly estimate the potential required for writeoperation by seeing the structure shown in FIGS. 1 and 3. The controlgate CG and the floating gate FG and the floating gate FG and thesubstrate can be regarded as capacitors where the gate insulation filmand the tunneling insulation film are respectively sandwiched. In otherwords, as seen from the control gate CG, the memory cell is equivalentto a structure where two capacitors are connected in series.

FIG. 4 is an equivalent circuit diagram of a cell that is obtained whenthe capacitance of the capacitor between the control gate CG and thefloating gate FG is Cip and the capacitance of the capacitor between thefloating gate FG and the substrate is Ctox. The electric potential Vfgof the floating gate FG when a high write potential (Vpgm=Vcg) isapplied to the control gate CG is defined by Cip and Ctox and can beroughly estimated by using the formula below:Vfg=Cr×(Vcg−Vt+Vt0),where Cr=Cip/(Cip+Ctox) and Vt represents the threshold voltage of thecell transistor while Vto represents the threshold voltage (neutralthreshold voltage) when the floating gate FG is totally free fromelectric charge.

The higher the electric potential Vfg of the floating gate FG, thestronger the electric field applied to the tunneling insulation film soinjection of electrons into the floating gate FG can easily take place.It will be appreciated from the above formula that the value of Vfg canbe raised by increasing the capacitance ratio (Cr) provided that Vcg isheld to a constant level. In other words, it is necessary to make Ciphave a large value relative to Ctox in order to reduce the writevoltage.

The capacitance of a capacitor is proportional to the dielectricconstant of the thin film arranged between the electrodes and the areaof the opposed electrodes and inversely proportional to the distancebetween the opposed electrodes. A write/erase operation is obstructedwhen a leak current flows through the tunneling insulation film forallowing an electric charge to pass through for the purpose of thewrite/erase operation. Therefore, a technique of increasing the contactarea of the gate insulation film and the floating gate FG and that ofthe gate insulation film and the control gate CG is normally used toincrease the value of Cip. Techniques such as increasing the top surfaceof the floating gate FG by reducing the width of the slit (dimension 1 ain FIG. 2) and increasing the length of the lateral walls of thefloating gate FG (dimension 1 b in FIG. 2) by increasing the filmthickness of the floating gate FG have been developed to date.

However, when such a technique is used, the slit needs to be extremelymicronized relative to the dimensions of the gate and the wiringmaterials and the difficulty of forming the gate increases as thefloating gate FG is made thicker. Additionally, the parasiticcapacitance between FG-FG increases as a result of micronization. Inshort, it obstructs micronization of cell transistors to maintain thecapacitance ratio.

It is conceivable to reduce the write voltage by modifying theconfiguration of the floating gate FG and the control gate CG.

As a matter of fact, Japanese Laid-Open Patent (Kokai) No. 11-145429describes a NAND type EEPROM that is designed to allow write/erase/readoperations to be performed with a low voltage by increasing thecapacitance between booster plates.

Japanese Laid-Open Patent (Kokai) No. 2002-217318 describes anonvolatile memory device including micronized elements that arerealized by raising the coupling ratio of the floating gate and thecontrol gate and thereby reducing the write voltage.

Japanese Laid-Open Patent (Kokai) No. 2002-50703 describes a nonvolatilesemiconductor memory device including MOSFETs that show improvedwrite/erase/read characteristics and area realized by forming floatinggate at opposite lateral sides of each control gate.

Furthermore, Y. Sasago et al. “10-MB/s Multi-Level Programming ofGb-Scale Flash Memory Enabled by New AG-AND Cell Technology” 2002 IEEEIEDM, pp. 952-954 describes an AG-AND memory cell where an assist gateis arranged adjacent to a floating gate.

However, it is still difficult to increase the capacitance between thecontrol gate and the floating gate by means of the above described priorart. In other words, it is difficult to reduce the write voltage andrealize a highly integrated memory that operates at high speed by meansof the prior art. Therefore, nonvolatile semiconductor memory devicesthat can reduce the write voltage, has high capacity and realize a highspeed operation.

Further, selection transistors are processed with cell transistors,simultaneously. Therefore, the gate insulation film and the diffusionlayer which is the source or drain region of the selection transistorscannot be formed separately with the gate insulation film and thediffusion layer which is the source or drain region of the celltransistors. As the result, characteristics of the selectiontransistors, such as cut-off characteristics at a write/read time areset dependently being influenced by an ion dose amount during theforming of the diffusion layer and a thickness of the gate insulationfilm.

BRIEF SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided anonvolatile semiconductor memory device including: a memory cellincluding a floating gate formed on a semiconductor substrate via afirst gate insulation film, a pair of diffusion layers which are sourceor drain regions positioned on the opposite sides of the floating gateand formed in the substrate, first and second control gates formed onthe opposite sides of the floating gate to drive the floating gate, andan inter-gate insulation film formed between at least the first andsecond control gates and the floating gate; and a selection transistorfor selecting the memory cell, including a selection gate formed on thesubstrate via a second gate insulation film, and a pair of seconddiffusion layers which are formed in the substrate positioned on theopposite sides of the selection gate and one of which is electricallyconnected to one of the pair of first diffusion layers and which aresource or drain regions.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a plan view showing an example of a conventional nonvolatilesemiconductor memory device;

FIG. 2 is a cross-sectional view of FIG. 1;

FIG. 3 is another cross-sectional view of FIG. 1;

FIG. 4 is an equivalent circuit diagram of FIG. 1;

FIG. 5 is a plan view showing a constitution of a part of a cell arrayin the nonvolatile semiconductor memory device according to a firstembodiment;

FIG. 6 is a cross-sectional view of FIG. 5;

FIG. 7 is another cross-sectional view of FIG. 5;

FIG. 8 is a still another cross-sectional view of FIG. 5;

FIG. 9 is an equivalent circuit diagram of a cell of the firstembodiment;

FIGS. 10A and 10B are cross-sectional views showing a first step of amethod of manufacturing a nonvolatile semiconductor memory deviceaccording to the first embodiment;

FIGS. 11A and 11B are cross-sectional views showing a step subsequent toFIGS. 10A and 10B;

FIGS. 12A and 12B are cross-sectional views showing a step subsequent toFIGS. 11A and 11B;

FIGS. 13A and 13B are cross-sectional views showing a step subsequent toFIGS. 12A and 12B;

FIGS. 14A and 14B are cross-sectional views showing a step subsequent toFIGS. 13A and 13B;

FIGS. 15A and 15B are cross-sectional views showing a step subsequent toFIGS. 14A and 14B;

FIGS. 16A and 16B are cross-sectional views showing a step subsequent toFIGS. 15A and 15B;

FIGS. 17A and 17B are cross-sectional views showing a step subsequent toFIGS. 16A and 16B;

FIGS. 18A and 18B are cross-sectional views showing a step subsequent toFIGS. 17A and 17B;

FIGS. 19A and 19B are cross-sectional views showing a step subsequent toFIGS. 18A and 18B;

FIG. 20 is a sectional view showing a constitution of a part of the cellarray in the nonvolatile semiconductor memory device according to asecond embodiment;

FIGS. 21A and 21B are cross-sectional views showing a first step of amethod of manufacturing the nonvolatile semiconductor memory deviceaccording to the second embodiment;

FIGS. 22A and 22B are cross-sectional views showing a step subsequent toFIGS. 21A and 21B;

FIGS. 23A and 23B are cross-sectional views showing a step subsequent toFIGS. 22A and 22B;

FIG. 24 is a cross-sectional view showing a constitution of a part ofthe cell array in the nonvolatile semiconductor memory device accordingto a third embodiment;

FIGS. 25A and 25B are cross-sectional views showing a mid step of amethod of manufacturing the nonvolatile semiconductor memory deviceaccording to the third embodiment;

FIGS. 26A and 26B are cross-sectional views showing a step subsequent toFIGS. 25A and 25B;

FIGS. 27A and 27B are cross-sectional views showing a step subsequent toFIGS. 26A and 26B;

FIGS. 28A and 28B are cross-sectional views showing a step subsequent toFIGS. 27A and 27B;

FIGS. 29A and 29B are cross-sectional views showing a step subsequent toFIGS. 28A and 28B;

FIGS. 30A and 30B are cross-sectional views showing a step subsequent toFIGS. 29A and 29B;

FIG. 31 is a pattern plan view of the nonvolatile semiconductor memorydevice according to a fourth embodiment;

FIGS. 32A to 32D are cross-sectional views showing a different sectionof FIG. 31;

FIGS. 33A to 33D are cross-sectional views showing a first step of amethod of manufacturing the nonvolatile semiconductor memory deviceaccording to the fourth embodiment;

FIGS. 34A to 34D are cross-sectional views showing a step subsequent toFIGS. 33A to 33D;

FIGS. 35A to 35D are cross-sectional views showing a step subsequent toFIGS. 34A to 34D;

FIGS. 36A to 36D are cross-sectional views showing a step subsequent toFIGS. 35A to 35D;

FIGS. 37A to 37D are cross-sectional views showing a step subsequent toFIGS. 36A to 36D;

FIGS. 38A to 38D are cross-sectional views showing a step subsequent toFIGS. 37A to 37D;

FIGS. 39A to 39D are cross-sectional views showing a step subsequent toFIGS. 38A to 38D;

FIGS. 40A to 40D are cross-sectional views showing a step subsequent toFIGS. 39A to 39D;

FIGS. 41A to 41D are cross-sectional views showing a step subsequent toFIGS. 40A to 40D;

FIGS. 42A to 42D are cross-sectional views showing a step subsequent toFIGS. 41A to 41D;

FIGS. 43A to 43D are cross-sectional views showing a step subsequent toFIGS. 42A to 42D;

FIGS. 44A to 44D are cross-sectional views showing a step subsequent toFIGS. 43A to 43D;

FIGS. 45A to 45D are cross-sectional views showing a step subsequent toFIGS. 44A to 44D;

FIG. 46 is a pattern plan view of the nonvolatile semiconductor memorydevice according to a fifth embodiment;

FIGS. 47A to 47D are cross-sectional views showing a different sectionof FIG. 46;

FIGS. 48A to 48D are cross-sectional views showing a first step of amethod of manufacturing the nonvolatile semiconductor memory deviceaccording to the fifth embodiment;

FIGS. 49A to 49D are cross-sectional views showing a step subsequent toFIGS. 48A to 48D;

FIGS. 50A to 50D are cross-sectional views showing a step subsequent toFIGS. 49A to 49D;

FIGS. 51A to 51D are cross-sectional views showing a step subsequent toFIGS. 50A to 50D;

FIGS. 52A to 52D are cross-sectional views showing a step subsequent toFIGS. 51A to 51D;

FIGS. 53A to 53D are cross-sectional views showing a step subsequent toFIGS. 52A to 52D;

FIGS. 54A to 54D are cross-sectional views showing a step subsequent toFIGS. 53A to 53D;

FIGS. 55A to 55D are cross-sectional views showing a step subsequent toFIGS. 54A to 54D;

FIGS. 56A to 56D are cross-sectional views showing a step subsequent toFIGS. 55A to 55D;

FIGS. 57A to 57D are cross-sectional views showing a step subsequent toFIGS. 56A to 56D;

FIGS. 58A to 58D are cross-sectional views showing a step subsequent toFIGS. 57A to 57D;

FIGS. 59A to 59D are cross-sectional views showing a step subsequent toFIGS. 58A to 58D;

FIG. 60 is a circuit diagram showing a known NAND type EEPROM;

FIG. 61 is a diagram showing an example of a potential in a case wheredata is written in a memory cell shown in FIG. 60;

FIG. 62 is a circuit diagram showing a constitution of the nonvolatilesemiconductor memory device according to the first to fifth embodiments;

FIG. 63 is a diagram showing an example of a potential applied to eachpart in a case where the data is written, together with a schematicsection of the circuit of FIG. 62;

FIG. 64 is an equivalent circuit diagram showing an example of potentialsetting in a case where the data is written in the cell shown in FIG.62;

FIG. 65 is an equivalent circuit diagram showing another example of thepotential setting in a case where the data is written in the cell shownin FIG. 62;

FIG. 66 is a diagram showing an example of writing of the data using thepotential setting shown in FIG. 65;

FIG. 67 is a diagram showing an example of the potential applied to eachpart in a case where the data is erased in the nonvolatile semiconductormemory device according to the first to fifth embodiments;

FIG. 68 is a diagram showing an example of the potential applied to eachpart in a case where the data is read in the nonvolatile semiconductormemory device according to the first to fifth embodiments; and

FIG. 69 is a diagram showing another example of the potential applied toeach part in a case where the data is read in the nonvolatilesemiconductor memory device according to the first to fifth embodiments.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described hereinafter in accordance withembodiments.

(First Embodiment)

FIGS. 5 to 8 show a constitution of a part of a cell array in anonvolatile semiconductor memory device according to a first embodiment.FIG. 5 is a plan view of the cell array, and FIGS. 6 to 8 arecross-sectional views showing different sections of FIG. 5.

A cell array according to the first embodiment comprises a plurality ofcell transistors connected in series to one another to constitute amemory cell array, and a selection transistor for selecting the celltransistor, connected to the memory cell array.

In each cell transistor, a floating gate 13 (FG) formed on a siliconsemiconductor substrate 11 via a gate insulation film 12, a pair ofdiffusion layers 14 which are source or drain regions positioned onopposite sides of the floating gate 13 and formed in the substrate 11,and first and second control gates 16 formed on the opposite sides ofthe floating gate 13 via inter-gate insulation films 15 are disposed.The inter-gate insulation films 15 are extended and formed between thefirst and second control gates 16 and the pair of diffusion layers 14.The gate insulation film 12 is extended and formed between the first andsecond control gates 16 and the pair of diffusion layers 14 so that thefilm 12 is positioned under the inter-gate insulation films 15.Furthermore, metal salicide layers 17 are formed on the first and secondcontrol gates 16.

In the selection transistor, a selection gate (SG) 19 formed via a gateinsulation film 18 which is different from the gate insulation film 12,and a pair of diffusion layers 20 which are source or drain regionspositioned on the opposite sides of the selection gate 19 and formed inthe substrate 11 are disposed on the silicon semiconductor substrate 11.Moreover, in the pair of diffusion layers 20, the diffusion layer 20 ona memory cell side is electrically connected to and integrated with thediffusion layer 14 which is the source or drain region on the memorycell side. Furthermore, metal salicide layers 21 are formed on thesurfaces of the pair of diffusion layers 20 and selection gate 19.Spacers 22 made of insulation materials are formed on sidewalls of theselection gate 19 and a sidewall of the control gate 16 adjacent to theselection gate 19. This spacer 22 may comprise a single layer of theinsulation film, or a plurality of layers of insulation films.

As shown in FIGS. 7 and 8, a shallow trench 23 for shallow trenchisolation (STI) extended in parallel with an arrangement direction ofthe diffusion layers 14, 20 are formed in the substrate 11, and aninsulation film 24 for isolating devices is buried in the trench 23 toisolate a plurality of memory cell arrays from one another.

A floating gate has heretofore been driven by a control gate in thecell. On the other hand, in the memory cell in the first embodiment, thefloating gate 13 is driven by two control gates 16 positioned on theopposite sides of the floating gate.

FIG. 9 shows an equivalent circuit of the cell of the first embodiment.Here, Cip represents a capacitance between two control gates CG and afloating gate FG, Cip_ext represents a capacitance between two controlgates CG and the substrate, and Ctox represents a capacitance betweenthe floating gate FG and the substrate. In this equivalent circuit,assuming that two control gates CG adjacent to the floating gate FG havean equal potential (Vcg), a capacitance ratio (Cr) which determines apotential Vfg of the floating gate is roughly estimated by the followingequation: $\begin{matrix}{{Cr} = {{Cip}/\left( {{Cip} + {Ctox}} \right)}} \\{= {\left( {{2 \cdot ɛ}\quad{{ip} \cdot W \cdot {{Tfg}/{Tip}}}} \right)/\left( {\left( {{2 \cdot ɛ}\quad{{ip} \cdot W \cdot {{Tfg}/{Tip}}}} \right) +} \right.}} \\{\left. {ɛ\quad{{tox} \cdot W \cdot {L/{Ttox}}}} \right),}\end{matrix}$where sip represents a permittivity of the inter-gate insulation film,εtox represents a permittivity of the gate insulation film, W representsa channel width of the cell transistor, L represents a gate length ofthe cell transistor, Tfg represents a film thickness of the floatinggate FG, Ttox represents a film thickness of the gate insulation film,and Tip represents a film thickness of the inter-gate insulation film.

It is seen from the above equation that Cr can be increased byincreasing the film thickness Tfg of the floating gate without changingthe channel width or the gate length of the transistor which should be aminimum design dimension in the cell transistor of the presentembodiment. This means that the capacitance ratio can be improved, evenwhen the cell is micronized.

Moreover, as shown in FIG. 6, a space between the floating gates 13 issubstantially completely filled with the control gate 16. Therefore, acoupling capacitance between the floating gates adjacent to each otherin a word line WL direction, which has heretofore been a problem in thecell, and a fringe capacitance between the substrate in which thesource/drain region of the cell transistor is formed and the floatinggate, that is, two parasitic capacitances are substantially shielded.

From the above, in the cell transistor of the first embodiment, thecapacitance ratio can be secured by increasing the film thickness of thefloating gate without considering any increase of the parasiticcapacitance. As a result, even when the gate length or the channel widthof the cell transistor is micronized, the capacitance ratio can beincreased. Additionally, since the capacitance ratio can be increased, awrite voltage can be reduced. Therefore, according to the firstembodiment, the micronizing of the cell transistor and the reducing ofthe write voltage can be simultaneously satisfied.

Furthermore, a gate insulation film which is different from the gateinsulation film 12 on a cell transistor is used as the gate insulationfilm 18 of the selection transistor. Therefore, the film thickness ofthe gate insulation film 18 can be adjusted independently of the gateinsulation film 12 of the cell transistor. Additionally, the diffusionlayer 20 which is the source or drain region of the selection transistoris different from the diffusion layer 14 which is the source or drainregion of the cell transistor. Therefore, an ion dose amount during theforming of the diffusion layer 20 can be adjusted independently of thediffusion layer 14 of the cell transistor. As a result, characteristicsof the selection transistor, such as cut-off characteristics at awrite/read time can be set independently without being influenced by thecell transistor.

FIGS. 10A and 10B to 19A and 19B show a method of manufacturing thenonvolatile semiconductor memory device according to the firstembodiment in order of steps. It is to be noted that each figure Acorresponds to a cross-sectional view of FIG. 6, and each figure Bcorresponds to a cross-sectional view of FIG. 8.

First, as shown in FIGS. 10A and 10B, the gate insulation film 12formed, for example, of silicon oxide is formed on the siliconsemiconductor substrate 11. For example, a polysilicon layer 30 and amask layer 31 are successively formed on the gate insulation film 12 toconstitute the floating gate. For example, a silicon oxide film or asilicon nitride film is applied to the mask layer 31. The mask layer 31has a minimum condition that a selectivity to the polysilicon layer 30is obtained in etching the polysilicon layer 30. However, it is morepreferable that a selectivity to the insulation film for the burying beobtained in a chemical mechanical polishing (CMP) step during theforming of STI described later and that a selectivity to the controlgate be obtained in the CMP step during the forming of the control gate.Thereafter, the mask layer 31 is patterned by a lithography step and aselective etching step. The polysilicon layer 30, gate insulation film12, and substrate 11 are successively etched using the patterned masklayer 31 to form the shallow trench 23 for isolating the devices.

Next, as shown in FIGS. 11A and 11B, the insulation film 24 formed, forexample, of a silicon oxide film is formed on the whole surface, forexample, by chemical vapor deposition (CVD) to fill the trench 23 formedin the substrate 11. Subsequently, as shown in FIGS. 12A and 12B, theinsulation film 24 is polished down to the mask layer 31 by the CMP stepusing the mask layer 31 as a stopper, and the STI is formed.

Subsequently, as shown in FIGS. 13A and 13B, the lithography step andthe selective etching step are performed to etch the polysilicon layer30. As a result, the floating gate 13 is formed. At this time, only thegate insulation film 12 remains in a region where a selection gate is tobe formed. Thereafter, in a state in which the region scheduled to formthe selection gate is masked by a mask layer, impurity ions are injectedinto the substrate 11 using the floating gate 13 as the mask, and thediffusion layers 14 are formed to constitute the source/drain regions(S/D) of the cell transistor.

Thereafter, as shown in FIGS. 14A and 14B, the inter-gate insulationfilm 15 is formed on the whole surface. The inter-gate insulation film15 is formed, for example, by any one of silicon oxide, silicon nitride,aluminum oxide, hafnium oxide, and zirconium oxide, or a stacked film ofat least two of them. As an example, a so-called ONO film of threelayers including silicon oxide, silicon nitride, and silicon oxide maybe used.

Thereafter, as shown in FIGS. 15A and 15B, the inter-gate insulationfilms 15 and the gate insulation film 12 in and around the regionscheduled to form the selection gate are removed, and the gateinsulation film 18 formed of silicon oxide is newly formed in theremoved region. The gate insulation film 18 has a film thicknessdifferent from that of the gate insulation film 12 of the celltransistor.

Subsequently, as shown in FIGS. 16A and 16B, for example, a polysiliconlayer 32 is formed on the whole surface by the CVD to constitute thecontrol gate and the selection gate. Next, as shown in FIGS. 17A and17B, the polysilicon layer 32 is polished down to the mask layer 31 onthe floating gate 13 by the CMP step, and flatted.

Next, as shown in FIGS. 18A and 18B, a resist layer 33 is deposited onthe whole surface, the lithography step and the selective etching stepare performed, and the polysilicon layer 32 and the gate insulation film12 disposed under the polysilicon layer are etched using the patternedresist layer 33 as a mask. As a result, the control gates 16 and theselection gate 19 are simultaneously formed. Subsequently, the impurityions are injected into the substrate 11 using the selection gate 19 andthe adjacent control gate 16 as the mask, and the diffusion layers 20are formed to constitute the source/drain regions (S/D) of the selectiontransistor. The dose amount and an acceleration energy of ions duringthe ion injection are adjusted so that desired characteristics of theselection transistor are obtained.

Subsequently, as shown in FIGS. 19A and 19B, after the whole surface ofthe resist layer 33 is removed, an insulation material for forming thespacer is deposited on the whole surface, and thereafter etched by theRIE, and the spacers 22 are formed on the sidewalls of the selectiongate 19 and on the sidewall of the control gate 16 adjacent to theselection gate 19. As described above, this spacer 22 may comprise asingle insulation film, or a plurality of layers of insulation films. Inthis case, since a space between the selection gate 19 and the adjacentcontrol gate 16 is sufficiently large, the space is not completelyfilled with the spacer 22, and the diffusion layer 20 is exposed in thisportion. It is to be noted that after forming the spacer 22, theimpurity ions are injected again, and the diffusion layer 20constituting the source/drain region (S/D) of the selection transistormay be formed in a lightly doped drain (LDD) structure.

Next, the whole surface on which a metal thin film has been deposited isheated, and the mask layer 31 is used as a control film of a salicidereaction. Accordingly, the metal salicide layer 17 is formed on thecontrol gate 16, and metal salicide layers 21 are formed on theselection gate 19 and on the surface of the diffusion layer 20.Non-reacted metal thin films are thereafter removed.

Thereafter, an interlayer insulation film is deposited on the wholesurface, contact holes are further made in the interlayer insulationfilm positioned between the pair of selection gates 19, and contactselectrically connected to the metal salicide layers 21 are formed.

It is to be noted that a case where the control gate 16 has a salicidestructure has been described, but in the present embodiment, the controlgate 16 is formed in a self-aligning manner with respect to the floatinggate 13, and therefore a metal wiring may also be formed on the uppersurface of the control gate 16. Furthermore, the control gate 16 itselfmay also be formed of a metal material. In this embodiment, thefollowing materials are applicable to the control gate 16 and theselection gate 19.

Examples of a metal material applied to the salicide structure includetitanium, cobalt, and nickel. Moreover, when the control gate 16 and theselection gate 19 are formed of metal materials, for example, a stackedfilm of any one or at least two of titanium, tungsten, tungsten nitride,and titanium nitride are applicable.

In the present embodiment, the control gates 16 are formed on theopposite side surfaces of the floating gate 13 via the inter-gateinsulation films 15. Therefore, capacitive coupling of the floating gate13 and control gates 16 increases as compared with the prior art.Therefore, the wiring of the control gate 16 needs to be a materialhaving a sufficiently low resistance value, and the metal salicide layer17 formed on the control gate is useful for lowering the wiringresistance value of the control gate 16. The selection gate 19 and theadjacent control gate 16 are simultaneously processed. Therefore, adistance between the gates can be held to be constant without beinginfluenced by mask alignment shift at an exposure time, and it is easyto control the parasitic capacitance between the control gate 16 and theselection gate 19.

(Second Embodiment)

FIG. 20 shows a constitution of a part of the cell array in anonvolatile semiconductor memory device according to a secondembodiment, and corresponds to a cross-sectional view of FIG. 6 in thefirst embodiment. It is to be noted that in FIG. 20, portionscorresponding to those of FIG. 6 are denoted with the same referencenumerals, and the description is omitted.

In the cell array according to the first embodiment, the case has beendescribed where the space between the selection gate 19 and the adjacentcontrol gate 16 is sufficiently broadened and the space is notcompletely filled with the spacer 22 and the diffusion layer 20 isexposed in this portion and the metal salicide layer 21 is formed on thesurface of the diffusion layer.

On the other hand, in the second embodiment, the space between theselection gate 19 and the adjacent control gate 16 is narrowed, thespace is filled with the spacer 22, and the diffusion layer 20 is notexposed. Therefore, the metal salicide layer 21 is not formed on thesurface of the diffusion layer 20 in the portion filled with the spacer22. As shown in FIG. 20, an air gap 34 may also be formed in the spacer22 buried in the space between the selection gate 19 and the adjacentcontrol gate 16. Since the air gap 34 is formed, the parasiticcapacitance between the control gate 16 and the selection gate 19 can bereduced.

Even in the second embodiment, when the film thickness of the floatinggate is increased without considering any increase of the parasiticcapacitance, the capacitance ratio can be secured. As a result, evenwhen the gate length or the channel width of the cell transistor ismicronized, the capacitance ratio can be increased. Additionally, sincethe capacitance ratio can be increased, the write voltage can bereduced. Therefore, according to the second embodiment, the micronizingof the cell transistor and the reducing of the write voltage can besimultaneously satisfied.

Furthermore, the gate insulation film 18 which is different from thegate insulation film 12 of the cell transistor is used as the gateinsulation film of the selection transistor. Therefore, the filmthickness of the gate insulation film 18 can be adjusted independentlyof the gate insulation film 12 of the cell transistor. Additionally, thediffusion layer 20 which is the source or drain region of the selectiontransistor is different from the diffusion layer 14 which is the sourceor drain region of the cell transistor. Therefore, the ion dose amountduring the forming of the diffusion layer 20 can be adjustedindependently of the diffusion layer 14 of the cell transistor. As aresult, the characteristics of the selection transistor, such as thecut-off characteristics at the write/read time, can be set independentlywithout being influenced by the cell transistor.

Next, a method of manufacturing the nonvolatile semiconductor memorydevice according to the second embodiment will be described. The stepsof FIGS. 10A and 10B to 17A and 17B are similar to those of the firstembodiment.

Next, as shown in FIGS. 21A and 21B, the resist layer 33 is deposited onthe whole surface, and the resist layer 33 is patterned. During thepatterning, the resist layer is patterned in such a manner that thespace between the selection gate 19 and the adjacent control gate 16 issmaller than that in the first embodiment. Subsequently, the polysiliconlayer 32 and the gate insulation film 18 etched using the patternedresist layer 33 as a mask. As a result, the control gate 16 and theselection gate 19 are formed. Subsequently, the impurity ions areinjected into the substrate 11 using the selection gate 19 and theadjacent control gate 16 as the mask, and a pair of diffusion layers 20are formed. The dose amount and the acceleration energy of ions duringthe ion injection are adjusted in such a manner that desiredcharacteristics of the selection transistor are obtained.

Subsequently, as shown in FIGS. 22A and 22B, after the whole surface ofthe resist layer 33 is removed, the insulation material for forming thespacer is deposited on the whole surface. At this time, the spacebetween the selection gate 19 and the adjacent control gate 16 is filledwith the insulation material. Thereafter, the insulation material isetched by the RIE, and the spacers 22 are formed on the sidewalls of theselection gate 19 and in the space between the selection gate 19 and theadjacent control gate 16. Depending on conditions, the air gap 34 isformed inside the spacer 22 buried in the space between the selectiongate 19 and the adjacent control gate 16.

Furthermore, as shown in FIGS. 23A and 23B, a metal thin film isdeposited on the whole surface and thereafter heated, and the mask layer31 is used as the control film of the salicide reaction. Accordingly,the metal salicide layer 17 is formed on the control gate 16, and themetal salicide layers 21 are formed on the selection gate 19 and on theexposed surface of the diffusion layer 20. The non-reacted metal thinfilm is thereafter removed.

Thereafter, the interlayer insulation film is deposited on the wholesurface, further the contact hole is made in the interlayer insulationfilm positioned between the pair of selection gates 19, and the contactelectrically connected to the metal salicide layer 21 is formed.

It is to be noted that the diffusion layer 20 constituting thesource/drain region (S/D) of the selection transistor may have the LDDstructure in the same manner as in the first embodiment.

Even in this case, examples of the metal material applied to thesalicide structure include titanium, cobalt, and nickel. When thecontrol gate 16 and the selection gate 19 are formed of the metalmaterials, for example, the stacked film of any one or at least two oftitanium, tungsten, tungsten nitride, and titanium nitride areapplicable.

(Third Embodiment)

FIG. 24 shows a constitution of a part of the cell array in anonvolatile semiconductor memory device according to a third embodiment,and corresponds to cross-sectional views of FIGS. 6, 20 in the first,second embodiments. It is to be noted that in FIG. 24, portionscorresponding to those of FIG. 20 are denoted with the same referencenumerals, and the description is omitted.

In the cell arrays according to the first and second embodiments, thegate insulation film 18 is different from the gate insulation film 12.

On the other hand, the same film as the gate insulation film 12 underthe floating gate 13 is used as the gate insulation film under theselection gate 19 in the third embodiment.

In the present embodiment, the diffusion layers 20 which is the sourceor drain region of the selection transistor is different from thediffusion layer 14 of the cell transistor. Therefore, the ion doseamount during the forming of the diffusion layer 20 can be adjustedindependently of the diffusion layer 14 of the cell transistor, and thecharacteristics of the selection transistor, such as the cut-offcharacteristics at the write/read time, can be set independently withoutbeing influenced by the cell transistor.

It is to be noted that FIG. 24 shows a case where the space between theselection gate 19 and the adjacent control gate 16 is filled with thespacer 22 and the diffusion layer 20 is not exposed in the same manneras in FIG. 20. However the space is not completely filled with thespacer 22, and the diffusion layer 20 of this portion may also beexposed in the same manner as in FIG. 6. In this case, the metalsalicide layer 21 is formed on the surface of the diffusion layer 20 ofthis portion.

Next, a method of manufacturing the nonvolatile semiconductor memorydevice according to the third embodiment will be described. The steps ofFIGS. 10A and 10B to 14A and 14B are similar to those of the firstembodiment. In the first embodiment, thereafter the gate insulation film12 and the inter-gate insulation films 15 in and around the regionscheduled to form the selection gate are removed, and the gateinsulation film 18 formed of silicon oxide is newly formed in theremoved region. In this method, as shown in FIGS. 25A and 25B, only theinter-gate insulation films 15 in and around the region scheduled toform the selection gate are removed, and the gate insulation film 12 isleft as such.

Thereafter, as shown in FIGS. 26A and 26B, for example, the polysiliconlayer 32 constituting the control gate and the selection gate is formedon the whole surface by the CVD. Next, as shown in FIGS. 27A and 27B,the polysilicon layer 32 is polished down to the mask layer 31 on thefloating gate 13 by the CMP step, and flatted.

Next, as shown in FIGS. 28A and 28B, the resist layer 33 is deposited onthe whole surface, the lithography and selective etching steps areperformed, and the polysilicon layer 32 and the gate insulation film 12are etched using the patterned resist layer 33 as the mask. As a result,the control gate 16 and the selection gate 19 are formed. Subsequently,the impurity ions are injected into the substrate 11 using the selectiongate 19 and the adjacent control gate 16 as the masks, and the diffusionlayer 20 is formed to constitute the source/drain region (S/D) of theselection transistor. The dose amount and the acceleration energy ofions during the ion injection are adjusted in such a manner that thedesired characteristics of the selection transistor are obtained.

Subsequently, as shown in FIGS. 29A and 29B, after the resist layer 33is removed from the whole surface, the insulation material for formingthe spacer is deposited on the whole surface. Thereafter, the insulationmaterial is etched by the RIE, and the spacers 22 are formed on thesidewalls of the selection gate 19 and on the sidewall of the controlgate 16 adjacent to the selection gate 19. In this case, since the spacebetween the selection gate 19 and the adjacent control gate 16 is small,the space is filled with the spacer 22, and the diffusion layer 20 inthis portion is not exposed. It is to be noted that after the spacers 22are formed, the impurity ions are injected again, and the diffusionlayer 20 constituting the source/drain region (S/D) of the selectiontransistor may be formed in the LDD structure. The air gap 34 is formedin the spacer 22 buried in the space between the selection gate 19 andthe adjacent control gate 16.

Next, as shown in FIGS. 30A and 30B, the metal thin film is deposited onthe whole surface and thereafter heated, and the mask layer 31 is usedas the control film of the salicide reaction. Accordingly, the metalsalicide layer 17 is formed on the control gate 16, and the metalsalicide layers 21 are formed on the selection gate 19 and on theexposed surface of the diffusion layer 20. The non-reacted metal thinfilm is thereafter removed.

Thereafter, the interlayer insulation film is deposited on the wholesurface, further the contact hole is made in the interlayer insulationfilm positioned between the pair of selection gates 19, and the contactelectrically connected to the metal salicide layer 21 is formed.

Even in this case, the examples of the metal material applied to thesalicide structure include titanium, cobalt, and nickel. When thecontrol gate 16 and the selection gate 19 are formed of the metalmaterials, for example, the stacked film of any one or at least two oftitanium, tungsten, tungsten nitride, and titanium nitride areapplicable.

(Fourth Embodiment)

Next, a nonvolatile semiconductor memory device according to a fourthembodiment will be described.

In the nonvolatile semiconductor memory devices according to the firstto third embodiments, the control gate of the cell transistor and theselection gate of the selection transistor are constituted using aconductive material (polysilicon layer) of the same layer, and thefloating gate of the cell transistor is constituted using the conductivematerial (polysilicon layer) of the layer different from that of theconductive material.

On the other hand, in the nonvolatile semiconductor memory deviceaccording to the fourth embodiment, the floating gate of the celltransistor and the selection gate of the selection transistor areconstituted using the conductive material of the same layer, and thecontrol gate of the cell transistor is constituted using the conductivematerial of the layer different from that of the floating gate and theselection gate.

FIG. 31 is a pattern plan view of the nonvolatile semiconductor memorydevice according to the fourth embodiment. A plurality of memory cellsis connected in series to the selection transistor to constitute amemory cell array. A plurality of memory cell arrays is arranged in amatrix form. FIGS. 32A to 32D are cross-sectional views along lines a-a,b-b, c-c, d-d in FIG. 31.

The nonvolatile semiconductor memory device according to the embodimentcomprises: a cell transistor including a floating gate 13 which isformed on a semiconductor substrate 11 via a gate insulation film 12 andon which a mask layer 31 is formed, a pair of diffusion layers 14 whichare source or drain regions positioned on the opposite sides of thefloating gate 13 and formed in the substrate 11, a pair of control gates16 which are formed on the opposite sides of the floating gate 13 andwhich drive the floating gate 13, and inter-gate insulation films 15formed between the pair of control gates 16 and the floating gate 13; aselection transistor for selecting the cell transistor, including aselection gate 19 which is formed on the substrate 11 via the gateinsulation film 12 and on which the mask layer 31 is formed, and a pairof diffusion layers 20 constituting source or drain regions which areformed in the substrate 11 positioned on the opposite sides of theselection gate 19 and one of which is connected to the diffusion layer14 of the cell transistor; and a wiring 38 which is extended in alateral direction (line direction) in FIG. 31 to connect the selectiongates 19 of a plurality of memory cell arrays to one another. As shownin FIGS. 32A to 32D, the respective memory cell arrays are mutuallyisolated by the insulation film 24 for isolating devices, buried in thetrench 23.

A method of manufacturing the nonvolatile semiconductor memory deviceaccording to the fourth embodiment will be described hereinafter withreference to FIGS. 33A to 33D to 45A to 45D. It is to be noted that eachfigure A corresponds to a cross-sectional view of line a-a in FIG. 31,each figure B corresponds to a cross-sectional view of line b-b in FIG.31, each figure C corresponds to a cross-sectional view of line c-c inFIG. 31, and each figure D corresponds to a cross-sectional view of lined-d in FIG. 31.

First, as shown in FIGS. 33A to 33D, the gate insulation film 12 formed,for example, of silicon oxide is formed on the silicon semiconductorsubstrate 11. For example, a polysilicon layer 30 and a mask layer 31are successively formed on the gate insulation film 12 to constitute thefloating gate. For example, a silicon oxide film or a silicon nitridefilm is applied to the mask layer 31. The mask layer 31 has a minimumcondition that a selectivity to the polysilicon layer 30 is obtained inetching the polysilicon layer 30. However, it is more preferable that aselectivity to the insulation film for the burying be obtained in theCMP step during the forming of STI described later and that aselectivity to the control gate be obtained in the CMP step during theforming of the control gate. Thereafter, the mask layer 31 is patternedby the lithography step and the selective etching step. The polysiliconlayer 30, gate insulation film 12, and substrate 11 are successivelyetched using the patterned mask layer 31 to form the shallow trench 23for isolating the devices.

Next, as shown in FIGS. 34A to 34D, an insulation film 24 formed, forexample, of a silicon oxide film is formed on the whole surface, forexample, by the CVD to fill in the trench 23 formed in the substrate 11.Subsequently, as shown in FIGS. 35A to 35D, the insulation film 24 ispolished down to the mask layer 31 by the CMP step using the mask layer31 as a stopper, and the STI is formed.

Next, the lithography and selective etching steps are performed to etchthe polysilicon layer 30. In this case, as shown in FIGS. 36A to 36D,the mask layer 31 is patterned in such a manner that the mask layer 31remains on a floating gate forming region of the cell transistor and aselection gate forming region of the selection transistor. Thereafter,the polysilicon layer 30 is etched, and the floating gate 13 andselection gate 19 are formed by the same polysilicon layer 30.Thereafter, in a state in which the mask layer 31 is left, the impurityions are injected into the substrate 11, and the diffusion layers 14 areformed to constitute the source/drain region (S/D) of the celltransistor. At this time, the diffusion layer 14 is also formed in aportion constituting the source/drain region (S/D) of the selectiontransistor.

Subsequently, as shown in FIGS. 37A to 37D, the inter-gate insulationfilm 15 is formed on the whole surface. The inter-gate insulation film15 is formed, for example, by a stacked film of any one or at least twoof silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, andzirconium oxide. As an example, the ONO film may be used.

Thereafter, as shown in FIGS. 38A to 38D, for example, a polysiliconlayer 32 constituting the control gate is formed on the whole surface bythe CVD. Next, as shown in FIGS. 39A to 39D, the polysilicon layer 32 ispolished down to the mask layer 31 on the floating gate 13 by the CMPstep, and flatted.

Next, as shown in FIGS. 40A to 40D, the lithography and selectiveetching steps are performed to etch the polysilicon layer 32, inter-gateinsulation film 15, and gate insulation film 12 in order to leave thepolysilicon layer 32, inter-gate insulation film 15, and gate insulationfilm 12 in the control gate forming region. As a result, the controlgate 16 is formed.

Subsequently, as shown in FIGS. 41A to 41D, the insulation material forforming the spacer is deposited on the whole surface, the insulationmaterial is thereafter etched by the RIE, and the spacers 22 are formedon the sidewalls of the selection gate 19 and on the sidewall of thecontrol gate 16 adjacent to the selection gate 19. In this case, since aspace between the selection gate 19 and the adjacent control gate 16 issufficiently large, the space is not completely filled with the spacer22, and the diffusion layer 14 is exposed in this portion. Subsequently,the impurity ions are injected into the substrate 11 again, and thediffusion layers 20 are formed on the surface of the diffusion layer 14positioned between the selection gate 19 and the adjacent control gate16 and the surface of the diffusion layer 14 positioned between the pairof selection gates 19.

Next, as shown in FIGS. 42A to 42D, the metal thin film is deposited onthe whole surface and thereafter heated, and the mask layer 31 is usedas the control film of the silicide reaction. Accordingly, the metalsalicide layer 17 is formed on the control gate 16, and the metalsalicide layer 21 is formed on the surface of the diffusion layer 20.The non-reacted metal thin film is thereafter removed.

Subsequently, as shown in FIGS. 43A to 43D, a barrier film and aninterlayer insulation film 35 formed, for example, of SiN are depositedon the whole surface. Next, as shown in FIGS. 44A to 44D, the interlayerinsulation film 35 is polished down to the mask layer 31 on the floatinggate 13 by the CMP step, and flatted.

Next, as shown in FIGS. 45A to 45D, after depositing an insulation film36 on the whole surface, the lithography and selective etching steps areperformed to form openings 37 in the insulation film 36. Subsequently,the mask layer 31 on the selection gate 19 is etched/removed via theopening 37.

Next, as shown in FIGS. 32A to 32D described above, a metal film forwiring is deposited on the whole surface, and thereafter the wholesurface is polished by the CMP step, and flatted. Accordingly, a wiring38 is formed to connect the selection gates 19 of different memory cellarrays to one another.

Thereafter, contact holes are opened with respect to the insulation film36 and the interlayer insulation film 35 positioned between the pair ofselection gates 19, and the contact electrically connected to the metalsalicide layer 21 is formed.

In this manner, in the nonvolatile semiconductor memory device shown inFIGS. 31 and 32A to 32D, the floating gate 13 of the cell transistor andthe selection gate 19 of the selection transistor are constituted usingthe conductive material of the same layer, and the control gate 16 ofthe cell transistor is constituted using the conductive material of thelayer different from that of the floating gate 13 and the selection gate19.

It is to be noted that in the fourth embodiment, the use of the gateinsulation films 12 having an equal film thickness as the gateinsulation films of the cell transistor and the selection transistor hasbeen described, but the gate insulation films having different filmthicknesses may also be used.

Moreover, a case where any air gap is not disposed in the spacer 22positioned between the control gate 16 and the selection gate 19 hasbeen described, but the air gap may also be disposed in the spacer 22 inthe same manner as in FIG. 20.

Even in this case, the examples of the metal material applied to thesalicide structure include titanium, cobalt, and nickel. When thecontrol gate 16 and the selection gate 19 are the metal materials, forexample, the stacked film of any one or at least two of titanium,tungsten, tungsten nitride, and titanium nitride are applicable.

Even in the fourth embodiment, when the film thickness of the floatinggate 13 is increased without considering any increase of the parasiticcapacitance, the capacitance ratio can be secured. As a result, evenwhen the gate length or the channel width of the cell transistor ismicronized, the capacitance ratio can be increased. Additionally, sincethe capacitance ratio can be increased, the write voltage can bereduced. Therefore, according to the fourth embodiment, the micronizingof the cell transistor and the reducing of the write voltage can besimultaneously satisfied.

Furthermore, the diffusion layer 20 which is the source or drain regionof the selection transistor is different from the diffusion layer 14 ofthe cell transistor, and therefore the ion dose amount during theforming of the diffusion layer 20 can be adjusted independently of thediffusion layer 14 of the cell transistor. As a result, thecharacteristics of the selection transistor, such as the cut-offcharacteristics at the write/read time, can be set independently withoutbeing influenced by the cell transistor.

The diffusion layer 20 constituting the source/drain region of theselection transistor may also be formed in the LDD structure in the samemanner as in the first embodiment.

(Fifth Embodiment)

Next, a nonvolatile semiconductor memory device according to a fifthembodiment will be described.

In the nonvolatile semiconductor memory device according to the fourthembodiment, the wiring 38 which mutually connects the selection gates 19of the different memory cell arrays is constituted using a metal film.On the other hand, in the nonvolatile semiconductor memory deviceaccording to the fifth embodiment, the wiring which mutually connectsthe selection gates 19 of the different memory cell arrays isconstituted using the conductive material of the same layer as that ofthe control gate of the cell transistor and the metal salicide filmformed on the control gate.

FIG. 46 is a pattern plan view of the nonvolatile semiconductor memorydevice according to the fifth embodiment. A plurality of celltransistors is connected in series to the selection transistor toconstitute a memory cell array. A plurality of memory cell arrays isarranged in a matrix form. FIGS. 47A to 47D are cross-sectional viewsalong lines a-a, b-b, c-c, d-d in FIG. 46.

The nonvolatile semiconductor memory device according to the embodimentcomprises: a cell transistor including a floating gate 13 which isformed on a semiconductor substrate 11 via a gate insulation film 12 andon which a mask layer 31 is formed, a pair of diffusion layers 14 whichare source or drain regions positioned on the opposite sides of thefloating gate 13 and formed in the substrate 11, control gates 16 whichare formed on the opposite sides of the floating gate 13 and which drivethe floating gate 13, and inter-gate insulation films 15 formed betweenthe control gates 16 and the floating gate 13; a selection transistorfor selecting the cell transistor, including a selection gate 19 whichis formed on the substrate 11 via the gate insulation film 12 and onwhich the mask layer 31 is formed, and a pair of diffusion layers 20constituting source or drain regions which are formed in the substrate11 positioned on the opposite sides of the selection gate 19 and one ofwhich is connected to the diffusion layer 14 of the cell transistor; anopening 39 formed in the mask layer 31 on the selection gate; a wiring40 which fills in the opening 39 and which is electrically connected tothe selection gate 19 and which is extended in a direction in adirection intersecting with an arrangement direction of the celltransistors and the selection transistor and which is constituted usingthe same conductive material as that of the first or second controlgate; and a metal salicide layer 41 formed on the wiring 40. As shown inFIGS. 47A to 47D, the respective memory cell arrays are isolated fromone another by the insulation film 24 for isolating devices, buried inthe trench 23.

A method of manufacturing the nonvolatile semiconductor memory deviceaccording to the fifth embodiment will be described hereinafter withreference to FIGS. 48A to 48D to 59A to 59D. It is to be noted that eachfigure A corresponds to a cross-sectional view of line a-a in FIG. 46,each figure B corresponds to a cross-sectional view of line b-b in FIG.46, each figure C corresponds to a cross-sectional view of line c-c inFIG. 46, and each figure D corresponds to a cross-sectional view of lined-d in FIG. 46.

First, as shown in FIGS. 48A to 48D, the gate insulation film 12 formed,for example, of silicon oxide is formed on the silicon semiconductorsubstrate 11. For example, a polysilicon layer 30 and a mask layer 31are successively formed on the gate insulation film 12 to constitute thefloating gate. For example, a silicon oxide film or a silicon nitridefilm is applied to the mask layer 31. The mask layer 31 has a minimumcondition that a selectivity to the polysilicon layer 30 is obtained inetching the polysilicon layer 30. However, it is more preferable that aselectivity to the insulation film for the burying be obtained in theCMP step during the forming of the STI and that a selectivity to thecontrol gate be obtained in the CMP step during the forming of thecontrol gate. Thereafter, the mask layer 31 is patterned by thelithography step and the selective etching step. The polysilicon layer30, gate insulation film 12, and substrate 11 are successively etchedusing the patterned mask layer 31 to form the shallow trench 23 forisolating the devices.

Next, as shown in FIGS. 49A to 49D, an insulation film 24 formed, forexample, of a silicon oxide film is formed on the whole surface, forexample, by the CVD to fill in the trench 23 formed in the substrate 11.Subsequently, as shown in FIGS. 50A to 50D, the insulation film 24 ispolished down to the mask layer 31 by the CMP step using the mask layer31 as a stopper, and the STI is formed.

Next, the lithography and selective etching steps are performed to etchthe polysilicon layer 30. In this case, as shown in FIGS. 51A to 51D,the mask layer 31 is patterned in such a manner that the mask layer 31remains on a floating gate forming region of the cell transistor and aselection gate forming region of the selection transistor. Thereafter,the polysilicon layer 30 is etched, and the floating gate 13 andselection gate 19 are formed by the same polysilicon layer 30.Thereafter, in a state in which the mask layer 31 is left, the impurityions are injected into the substrate 11, and the diffusion layers 14 areformed to constitute the source/drain region (S/D) of the celltransistor. At this time, the diffusion layer 14 is also formed in aportion constituting the source/drain region (S/D) of the selectiontransistor.

Subsequently, as shown in FIGS. 52A to 52D, the inter-gate insulationfilm 15 is formed on the whole surface. The inter-gate insulation film15 is formed, for example, by a stacked film of any one or at least twoof silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, andzirconium oxide. As an example, the ONO film may be used.

Next, as shown in FIGS. 53A to 53D, the lithography and selectiveetching steps are performed, a part of the mask layer 31 on theselection gate 19 is removed, and an opening 39 having a depth reachingthe selection gate 19 is formed.

Thereafter, as shown in FIGS. 54A to 54D, for example, a polysiliconlayer 32 constituting the wiring on the control gate and the selectiongate is formed on the whole surface by the CVD.

Next, as shown in FIGS. 55A to 55D, the polysilicon layer 32 is polisheddown to the mask layer 31 on the floating gate 13 by the CMP step, andflatted. By this step, the wiring 40 is formed in the opening 39.

Next, as shown in FIGS. 56A to 56D, the lithography and selectiveetching steps are performed, and the polysilicon layer 32, inter-gateinsulation film 15, and gate insulation film 12 are etched in such amanner that the polysilicon layer 32, the inter-gate insulation film 15disposed under the polysilicon layer, and the gate insulation film 12 inthe control gate forming region are left. As a result, the control gate16 is formed.

Subsequently, as shown in FIGS. 57A to 57D, the insulation material forforming the spacer is deposited on the whole surface. Thereafter, theinsulation material is etched by the RIE, and the spacers 22 are formedon the sidewalls of the selection gate 19 and on the sidewall of thecontrol gate 16 adjacent to the selection gate 19. In this case, since aspace between the selection gate 19 and the adjacent control gate 16 issufficiently large, the space is not completely filled with the spacer22, and the diffusion layer 14 is exposed in this portion. Subsequently,the impurity ions are injected into the substrate 11 again, and thediffusion layers 20 are formed on the surface of the diffusion layer 14positioned between the selection gate 19 and the adjacent control gate16 and the surface of the diffusion layer 14 positioned between the pairof selection gates 19.

Next, as shown in FIGS. 58A to 58D, the metal thin film is deposited onthe whole surface and thereafter heated, and the mask layer 31 is usedas the control film of the silicide reaction. Accordingly, the metalsalicide layer 17 is formed on the control gate 16, and the metalsalicide layer 21 is formed on the surface of the diffusion layer 20. Ametal salicide layer 41 is also formed on the wiring 40 on the selectiongate 19. The non-reacted metal thin film is thereafter removed.

Subsequently, as shown in FIGS. 59A to 59D, a barrier film made of, forexample, SiN and an interlayer insulation film 35 are deposited on thewhole surface. Next, as shown in FIGS. 47A to 47D, the interlayerinsulation film 35 is polished down to the mask layer 31 on the floatinggate 13 by the CMP step, and flatted.

Thereafter, a contact hole is made with respect to the interlayerinsulation film 35 positioned between the pair of selection gates 19,and a contact electrically connected to the metal salicide layer 21 isformed.

In this manner, in the nonvolatile semiconductor memory device shown inFIGS. 46 and 47A to 47D, the floating gate 13 of the cell transistor andthe selection gate 19 of the selection transistor are constituted usingthe same conductive material, and the control gate 16 of the celltransistor is constituted using the conductive materials different fromthose of the floating gate 13 and selection gate 19.

It is to be noted that in the fifth embodiment, the use of the gateinsulation films 12 having the equal film thickness as the gateinsulation films of the cell transistor and the selecting transistor hasbeen described, but the gate insulation films having different filmthicknesses may also be used.

Moreover, the case where any air gap is not disposed in the spacer 22positioned between the control gate 16 and the selection gate 19 hasbeen described, but the air gap may also be disposed in the spacer 22 inthe same manner as in FIG. 20.

Furthermore, the case where a part of the mask layer 31 on the selectiongate 19 is removed and the opening 39 having a depth reaching theselection gate 19 is formed when forming the wiring 40 connecting aplurality of selection gates 19 to one another has been described.However, in a state in which all the mask layers 31 on the selectiongates 19 are removed and all the upper portions of the selection gates19 are exposed, the wiring 40 made of the polysilicon layer may also beformed.

Even in this case, the examples of the metal material applied to thesalicide structure include titanium, cobalt, and nickel. When thecontrol gate 16 and the selection gate 19 are formed of the metalmaterials, for example, the stacked film of any one or at least two oftitanium, tungsten, tungsten nitride, and titanium nitride areapplicable.

Even in the fifth embodiment, when the film thickness of the floatinggate 13 is increased without considering any increase of the parasiticcapacitance, the capacitance ratio can be secured. As a result, evenwhen the gate length or the channel width of the cell transistor ismicronized, the capacitance ratio can be increased. Additionally, sincethe capacitance ratio can be increased, the write voltage can bereduced. Therefore, according to the fifth embodiment, the micronizingof the cell transistor and the reducing of the write voltage can besimultaneously satisfied.

Furthermore, the diffusion layer 20 which is the source or drain regionof the selection transistor is different from the diffusion layer 14 ofthe cell transistor, and therefore the ion dose amount during theforming of the diffusion layer 20 can be adjusted independently of thediffusion layer 14 on the cell transistor. As a result, thecharacteristics of the selection transistor, such as the cut-offcharacteristics at the write/read time, can be set independently withoutbeing influenced by the cell transistor.

It is to be noted that the diffusion layer 20 constituting thesource/drain region (S/D) of the selection transistor may also be formedin the LDD structure in the same manner as in the first embodiment.

Next, an operation of the nonvolatile semiconductor memory deviceaccording to the first to fifth embodiments will be described.

First, a known NAND type EEPROM will be described with reference toFIGS. 60, 61. FIG. 60 shows a circuit constitution of the NAND typeEEPROM, and FIG. 61 shows an example of a potential in a case where datais written in the cell transistor in this NAND type EEPROM. In FIGS. 60and 61, the same components are denoted with the same referencenumerals.

The NAND type EEPROM is constitutes by connecting a cell transistorincluding a plurality of adjacent memory cells MC and sources/drains ofselection gates ST1, ST2 in series. The selection gate ST1 is connectedto a bit line BL, and the selection gate ST2 is connected to a sourceline SL.

A predetermined gate potential Vsg is applied to a selection gate lineSGD on the side of the bit line BL at a data write time. A sufficientlylow potential Vbl is supplied to the bit line BL. The gate potential Vsgis set to a potential at which the selection gate ST1 can besufficiently turned on with respect to Vbl. When the potential Vbl issupplied to the bit line, the selection gate ST1 is turned on, and thepotential Vbl is transmitted to the cell transistor. Therefore, achannel potential of the cell transistor sufficiently drops, and thedata is written.

In the EEPROM, at the data write time, capacitance coupling between thecontrol gate and the floating gate is used in either an operation forapplying a write potential Vpgm to a selected word line WL (CG3 in FIG.61) to write data into the cell or an operation for applying a transferpotential Vpass to a non-selected word line WL (except CG3 in FIG. 61)to form a channel.

FIG. 62 shows a circuit constitution of the nonvolatile semiconductormemory device according to the first to fifth embodiments, and FIG. 63shows an example of a potential applied to each part in a case where thedata is written, together with a schematic section of the circuit.

As described above, two control gates CG are disposed on the oppositesides of the floating gate FG as described above, and the floating gateFG is selected by two control gates CG. That is, the floating gate FG isdriven by the capacitance coupling with two control gates CG.

For example, at the write time, the equal write potential Vpgm isapplied to two control gates CG positioned on the opposite sides of thefloating gate FG of the write target cell in which the data is written,and the substrate (P-type substrate) is set, for example, to 0 V. Thisequivalent circuit of the write target cell is shown in FIG. 64. In thisstate, charges are injected into the floating gate FG from thesubstrate. In this case, as described in the first to fifth embodiments,the capacitance ratio can be increased regardless of the micronizing ofthe device, and the potential Vpgm can be reduced as compared with theprior art.

It is to be noted that the potentials applied to each control gate CGand selection gates SGD, SGS are generated by a row decoder circuitwhich is a control gate driving circuit.

In the write operation, a case where the equal voltage is supplied totwo control gates CG to drive the floating gate FG has been described.However, different potentials may also be supplied to two control gatesCG.

FIG. 65 shows the equivalent circuit of the write target cell in a casewhere the potential Vpgm is supplied to one control gate CG, and 0 V issupplied to the other control gate CG. In FIG. 65, it is assumed that acapacitance ratio of Cip to Ctox is 1.5:1 and any charge is not injectedinto the floating gate FG in a neutral threshold voltage and theexisting threshold voltage is 0 V.

The potential Vfg of the floating gate FG shown in FIG. 64 is asfollows: $\begin{matrix}{{Vfg} = {{Vpgm} \times 2 \times {{Cip}/\left( {{2 \times {Cip}} + {Ctox}} \right)}}} \\{= {0.75 \times {Vpgm}}}\end{matrix}$

On the other hand, the potential Vfg of the floating gate FG shown inFIG. 65 is as follows: $\begin{matrix}{{Vfg} = {{Vpgm} \times {{Cip}/\left( {{2 \times {Cip}} + {Ctox}} \right)}}} \\{= {0.375 \times {Vpgm}}}\end{matrix}$

In this manner, when the potential of one of two control gates CG ischanged, the capacitance ratio can be largely controlled.

FIG. 66 shows an example of the writing of the data using theabove-described characteristics. In FIG. 66, the potentials Vpgm areapplied to the control gates CG on the opposite sides of the writetarget cell. By the use of the above-described assumption, a potentialof 0.75×Vpgm is applied to the floating gate FG of the write targetcell. While 0 V is applied to one of two control gates CG positioned onthe left side of the write target cell, and the potential Vpgm isapplied to the other control gate. Therefore, a potential of 0.375×Vpgmis applied to the floating gate FG of the cell positioned on the leftside of the write target cell. Therefore, an electric field stress tothe adjacent cell is ½ of the floating gate FG of the selected cell,which is sufficient for suppressing any write error. The potential istransferred to the control gate CG2 remote from the selected cell, or apredetermined potential Vpass for boosting the channel potential isapplied. At an actual device operation time, the potentials of thecontrol gates CG are appropriately combined in consideration of writecharacteristics, channel boosting characteristics, potential transfercharacteristics and the like.

FIG. 67 shows a cross-sectional view of the nonvolatile semiconductormemory device according to the first to fifth embodiments, and shows anexample of the potential applied to each part in a case where the datais erased.

When the data is erased, the substrate (P-type substrate) on which thecell transistors are arranged is boosted to an erase potential Vera.Moreover, the diffusion layer connected to the bit line BL and sourceline SL and the selection gates SGS, SGD are boosted to the potentialVera equal to that of the substrate in order to prevent collapse.Furthermore, a sufficiently low potential, for example, 0 V is suppliedto the control gate CG positioned adjacent to the cell to be erased.Then, the charges are pulled toward the boosted substrate from thefloating gate FG, and the data is erased.

It is to be noted that the control gate CG is floating in a non-erasedcell. In this case, the potential of the control gate CG is boosted tothe substrate potential by the capacitance coupling with the substrate,and the data is inhibited from being erased.

In this manner, even in the cell transistor having the structure inwhich the control gates CG are disposed on the opposite sides of thefloating gate FG, the data can be securely erased.

FIG. 68 shows a cross-sectional view of the nonvolatile semiconductormemory device according to the first to fifth embodiments, and shows anexample of the potential applied to each part in a case where the datais read.

In FIG. 68, read voltages Vwl are supplied to two control gates CG (CG4,CG5) adjacent to the floating gate FG (FG45) of a read target cell. Theread voltage Vwl is preferably set to an appropriate potential inconsideration of the write characteristics, data retentioncharacteristics, an operation range of a cell transistor thresholdvoltage and the like. Assuming that a read voltage Vwl=0 V is set, apotential of 0 V is applied to the floating gate FG of the read targetcell.

On the other hand, a potential Vread for passing a cell current isapplied to the control gate CG further adjacent to two control gates CGpositioned on the opposite sides of the read target cell. The potentialVread is preferably set to an appropriate potential in order toeliminate the influence of the non-selected cell connected to the readtarget cell and to judge the threshold voltage of the read target cell.

The bit line BL is connected to a sense amplifier circuit having a latchfunction, and the threshold voltage of the read target cell is judged inthe sense amplifier circuit to sense the data at the read time. Here, atthe read time, the threshold voltage is judged with respect to only thecell in which both two control gates CG disposed on the opposite sidesof the cell indicate a read voltage Vwl, and the cell in which thepotentials of two control gates CG indicate a combination different fromthe above-described combination is brought into an on-state regardlessof the stored data.

FIG. 69 shows a cross-sectional view of the nonvolatile semiconductormemory device according to the first to fifth embodiments, and showsanother example of the potential applied to each part in a case wherethe data is read.

In this example, read voltages Vwl are supplied to two control gates CG(CG4, CG5) positioned on the opposite sides of the floating gate FG(FG45) of the read target cell. A potential Vread2 for passing the cellcurrent is applied to the other control gate CG (CG1, CG2, etc.).

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventionconcept as defined by the appended claims and their equivalents. Forexample, a case where a plurality of memory cells are connected inseries, and connected to the NAND type has been described with referenceto FIG. 62, but a plurality of memory cell transistors may also beconnected to an AND type.

1. A nonvolatile semiconductor memory device comprising: a memory cellincluding a floating gate formed on a semiconductor substrate via afirst gate insulation film, a pair of diffusion layers which are sourceor drain regions positioned on the opposite sides of the floating gateand formed in the substrate, first and second control gates formed onthe opposite sides of the floating gate to drive the floating gate, andan inter-gate insulation film formed between at least the first andsecond control gates and the floating gate; and a selection transistorfor selecting the memory cell, including a selection gate formed on thesubstrate via a second gate insulation film, and a pair of seconddiffusion layers which are formed in the substrate positioned on theopposite sides of the selection gate and one of which is electricallyconnected to one of the pair of first diffusion layers and which aresource or drain regions.
 2. The nonvolatile semiconductor memory deviceaccording to claim 1, wherein a first mask layer is provided on thefloating gate, and a second mask layer is provided on the selectiongate.
 3. The nonvolatile semiconductor memory device according to claim2, wherein metal salicide layers are formed on the surfaces of the pairof second diffusion layers.
 4. The nonvolatile semiconductor memorydevice according to claim 1, wherein the selection gate includessidewalls, and the inter-gate insulation films are formed on thesidewalls.
 5. The nonvolatile semiconductor memory device according toclaim 4, wherein the selection gate is formed of the same conductivematerial as that of the floating gate.
 6. The nonvolatile semiconductormemory device according to claim 5, further comprising: a wiring formedon the selection gate and which is electrically connected to theselection gate and which is extended in a direction intersecting with anarrangement direction of the memory cells and a selection transistor. 7.The nonvolatile semiconductor memory device according to claim 6,wherein the wiring is formed of a metal layer.
 8. The nonvolatilesemiconductor memory device according to claim 6, wherein the wiring isformed of the same conductive material as that of the first and secondcontrol gates.
 9. The nonvolatile semiconductor memory device accordingto claim 1, wherein the inter-gate insulation film is extended andformed between the first and second control gates and the pair of firstdiffusion layers.
 10. The nonvolatile semiconductor memory deviceaccording to claim 9, wherein the first gate insulation film is extendedand formed between the first and second control gates and the pair offirst diffusion layers in such a manner that the first gate insulationfilm is positioned under the inter-gate insulation film.
 11. Thenonvolatile semiconductor memory device according to claim 1, furthercomprising: a trench formed in the substrate to extend in a directionparallel to the arrangement direction of the pair of first and seconddiffusion layers; and an insulation film formed in the trench.
 12. Thenonvolatile semiconductor memory device according to claim 1, wherein afilm thickness of the first gate insulation film is different from thatof the second gate insulation film.
 13. The nonvolatile semiconductormemory device according to claim 1, wherein a film thickness of thefirst gate insulation film is equal to that of the second gateinsulation film.
 14. The nonvolatile semiconductor memory deviceaccording to claim 1, wherein metal salicide layers are formed on theupper surface of the selection gate and the surfaces of the pair ofsecond diffusion layers.
 15. The nonvolatile semiconductor memory deviceaccording to claim 1, wherein an insulation film is formed between theselection gate and one of the first and second control gates positionedon the opposite sides of the selection gate.
 16. The nonvolatilesemiconductor memory device according to claim 15, wherein theinsulation film comprises one of a single layer of an insulation filmand a plurality of layers of insulation films.
 17. The nonvolatilesemiconductor memory device according to claim 15, wherein theinsulation film includes an air gap inside.
 18. The nonvolatilesemiconductor memory device according to claim 1, wherein the pair ofsecond diffusion layers includes an LDD structure.
 19. The nonvolatilesemiconductor memory device according to claim 1, wherein the floatinggate and the first and second control gates are formed of polysilicon.20. The nonvolatile semiconductor memory device according to claim 1,wherein each of the first and second control gates and the selectiongate comprises any one of titanium, tungsten, and titanium nitride or astacked film of at least two of them.
 21. The nonvolatile semiconductormemory device according to claim 1, wherein each of the first and secondcontrol gates and the selection gate comprises a silicide structure oftitanium, cobalt, or nickel metal.
 22. The nonvolatile semiconductormemory device according to claim 1, wherein the first and second gateinsulation films comprise silicon oxide.
 23. The nonvolatilesemiconductor memory device according to claim 1, wherein the inter-gateinsulation film comprises any one of silicon oxide, silicon nitride,aluminum oxide, hafnium oxide, and zirconium oxide, or a stacked film ofat least two of them.